Semiconductor material coating

The company can provide a variety of coating methods: MBE (molecular beam epitaxy) / ALD (atomic layer deposition) / magnetron sputtering (magnetron sputtering coating), etc.

MBE (molecular beam epitaxy): the epitaxial temperature is low, the film growth rate is slow, the beam intensity is easy to be accurately controlled, and the film composition and doping concentration can be quickly adjusted with the change of source. Single crystal thin films with tens of atomic layers can be prepared, as well as ultra-thin layer quantum well microstructure materials formed by alternately growing thin films with different components and doping.

ALD (atomic layer deposition): it is a chemical vapor deposition technology based on ordered and surface self saturation reaction. The prepared film has excellent three-dimensional conformality and large-area uniformity. It is suitable for film deposition on the surface of complex substrate with high aspect ratio, and can also ensure accurate sub monolayer film thickness control.

Magnetron sputtering (magnetron sputtering): a coating technology that uses Ar ions to bombard the target to produce cathode sputtering and sputter the target atoms onto the workpiece to form a deposition layer. Almost all materials can be deposited by magnetron sputtering, regardless of their melting temperature; The light source can be scaled and placed anywhere in the chamber according to the requirements of the substrate and coating; Thin films of alloys and compounds can be deposited while maintaining a similar composition to the original material.